Book Details

RF And Microwave Engineering

RF And Microwave Engineering

Published by uLektz

Course Code:EC2403

Author:uLektz

University: Anna University, Tamil Nadu

Regulation:2008

Categories:Electronics & Communication

Format : ico_bookePUB3 (DRM Protected)

Type :eBook

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Description :RF And Microwave Engineering of EC2403 covers the latest syllabus prescribed by Anna University, Tamil Nadu for regulation 2008. Author: uLektz, Published by uLektz Learning Solutions Private Limited.

Note : No printed book. Only ebook. Access eBook using uLektz apps for Android, iOS and Windows Desktop PC.

Topics
UNIT I TWO PORT RF NETWORKS-CIRCUIT REPRESENTATION

1.1 Low frequency parameters - impedance ,admittance, hybrid and ABCD

1.2 High frequency parameter

1.3 Formulation of S-matrix and properties of S parameters

1.4 Reciprocal and lossless networks

1.5 Transmission matrix

1.6 Introduction to component basics, wire, resistor, capacitor and inductor

1.7 Applications of RF

UNIT II RFTRANSISTOR AMPLIFIER DESIGN AND MATCHING NETWORKS

2.1 Amplifier power relation

2.2 Stability considerations

2.3 Gain considerations noise figure

2.4 Impedance matching networks

2.5 Frequency response

2.6 T and Π matching networks

2.7 Micro stripline matching networks

UNIT III MICROWAVE PASSIVE COMPONENTS

3.1 Microwave frequency range, significance of microwave frequency range -Applications of microwaves

3.2 Scattering matrix - Concept of N port scattering matrix representation -properties of S matrix-S matrix formulation of two-port junction

3.3 Microwave junctions -Tee junctions

3.4 Magic Tee -Rat race

3.5 Corners - bends and twists

3.6 Directional couplers - Two hole directional couplers

3.7 Ferrites - Important microwave properties and applications

3.8 Termination

3.9 Gyrator - Isolator, Circulator

3.10 Attenuator

3.11 Phase changer

3.12 S Matrix for microwave components

3.13 Cylindrical cavity resonators

UNIT IV MICROWAVE SEMICONDUCTOR DEVICES

4.1 Microwave semiconductor devices- operation - characteristics and application of BJTs and FETs

4.2 Principles of tunnel diodes

4.3 Varactor and Step recovery diodes

4.4 Transferred Electron Devices -Gunn diode- Avalanche Transit time devices

4.5 IMPATT and TRAPATT devices

4.6 Parametric devices - Principles of operation - applications of parametric amplifier

4.7 Microwave monolithic integrated circuit (MMIC) - Materials and fabrication techniques

UNIT V MICROWAVE TUBES AND MEASUREMENTS

5.1 Microwave tubes-High frequency limitations

5.2 Principle of operation of Multicavity Klystron

5.3 Reflex Klystron

5.4 Traveling Wave Tube

5.5 Magnetron

5.6 Microwave measurements: Measurement of power, wavelength, impedance, SWR, attenuation, Q and Phase shift

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