Electronic Devices and Circuits

Course Code:R1621041

Author:uLektz

University:

Regulation:2016

Categories:Electronics & Communication

Format : ePUB3 (DRM Protected)

Type :eBook

Rs.199 Rs.30 Rs.85% off

Description :Electronic Devices and Circuits of R1621041 covers the latest syllabus prescribed by JNTU Kakinada for regulation 2016. Author: uLektz, Published by uLektz Learning Solutions Private Limited.

Note : No printed book. Only ebook. Access eBook using uLektz apps for Android, iOS and Windows Desktop PC.

Topics
UNIT I SEMICONDUCTOR PHYSICS

1.1 Insulators, Semiconductors and Metals classification using energy band diagrams - Metals classification using energy band diagrams

1.2 Mobility and conductivity - Electrons and holes in intrinsic semiconductors, extrinsic semiconductors

1.3 Drift and diffusion, charge densities in semiconductors

1.4 Hall effect

1.5 Continuity equation - Law of junctions

1.6 Fermi Dirac function - Fermi level in intrinsic and extrinsic Semiconductors

UNIT II JUNCTION DIODE CHARACTERISTICS

2.1 Open circuited p-n junction - Biased p-n junction - p-n junction diode, current components in PN junction Diode

2.2 Diode equation

2.3 V-I Characteristics - Temperature dependence on V-I characteristics - Diode resistance, Diode capacitance - Energy band diagram of PN junction Diode

2.4 Zener Diode - Breakdown mechanisms - Zener diode applications

2.5 LED, Photodiode, Tunnel Diode, SCR, UJT

UNIT III RECTIFIERS AND FILTERS

3.1 Rectifiers and Filters: Basic Rectifier setup - Half wave rectifier, full wave rectifier, bridge rectifier - Two-diode Full-wave rectifier

3.2 Derivation of characteristics of rectifiers

3.3 Rectifier circuits-operation, input and output waveforms

3.4 Filters, Inductor filter, Capacitor filter - Comparison of various filter circuits in terms of ripple factors

UNIT IV TRANSISTOR CHARACTERISTICS

4.1 BJT: Junction transistor, transistor current components - Transistor current components

4.2 Transistor equation, Transistor configurations - Transistor as an amplifier

4.3 Characteristics of transistor in Common Base, Common Emitter and Common Collector configurations

4.4 Ebers-Moll model of a transistor, punch through/reach through

4.5 Phototransistor

4.6 Typical transistor junction voltage values

4.7 FET: FET types, Construction, operation, characteristics, parameters

4.8 MOSFET-types - Construction, operation, characteristics

4.9 Comparison between JFET and MOSFET

UNIT V TRANSISTOR BIASING AND THERMAL STABILIZATION

5.1 Transistor Biasing and Thermal Stabilization: Need for biasing, operating point, load line analysis

5.2 BJT biasing - methods, basic stability - Fixed bias, collector to base bias, self bias

5.3 Stabilization against variations in VBE, Ic and β, Stability factors, (S, S', S”)

5.4 Bias compensation, Thermal runaway, Thermal stability - Thermal Runaway - Thermal Stability

5.5 FET Biasing- methods and stabilization

UNIT VI SMALL SIGNAL LOW-FREQUENCY TRANSISTOR AMPLIFIER MODELS

6.1 BJT: Two-port network

6.2 Transistor hybrid model - Determination of h-parameters - Conversion of h-parameters

6.3 Generalized analysis of transistor amplifier model using h-parameters

6.4 Analysis of CB, CE and CC amplifiers using exact and approximate analysis - Comparison of transistor amplifiers

6.5 FET: Generalized analysis of small signal model

6.6 Analysis of CG, CS and CD amplifiers - Comparison of FET amplifiers