Book Details

Semiconductor Devices

Semiconductor Devices

Published by uLektz

Course Code:ULZ0367

Author:uLektz

University: General for All University

Regulation:2017

Categories:Electronics & Communication

Format : ico_bookePUB3 (DRM Protected)

Type :eBook

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Description :Semiconductor Devices of ULZ0367 covers the latest syllabus prescribed by General for All University for regulation 2017. Author: uLektz, Published by uLektz Learning Solutions Private Limited.

Note : No printed book. Only ebook. Access eBook using uLektz apps for Android, iOS and Windows Desktop PC.

Topics
UNIT-I INTRODUCTION TO THE QUANTUM THEORY OF SOLIDS, ELECTRONS AND HOLES IN SEMICONDUCTORS

1.1 Introduction to the quantum theory of solids: Formation of energy bands, The k-space diagram (two and three dimensional representation)

1.2 Conductors, semiconductors and insulators. Electrons and Holes in semiconductors: Silicon crystal structure, Donors and acceptors in the band model, electron effective mass

1.3 Density of states, Thermal equilibrium, Fermi-Dirac distribution function for electrons and holes, Fermi energy. Equilibrium distribution of electrons & holes

1.4 Derivation of n and pfrom D(E) and f(E), Fermi level and carrier concentrations, The np product and the intrinsic carrier concentration. General theory of n and p, Carrier concentrations at extremely high and low temperatures: complete ionization, partial ionization and freeze-out. Energy-band diagram and Fermi-level, Variation of EF with doping concentration and temperature

UNIT-II MOTION AND RECOMBINATION OF ELECTRONS AND HOLES

2.1 Motion and Recombination of Electrons and Holes: Carrier drift: Electron and hole mobilities, Mechanism of carrier scattering, Drift current and conductivity

2.2 Motion and Recombination of Electrons and Holes (continued): Carrier diffusion: diffusion current, Total current density, relation between the energy diagram and potential, electric field. Einstein relationship between diffusion coefficient and mobility. Electron-hole recombination, Thermal generation

2.3 PN Junction: Building blocks of the pn junction theory: Energy band diagram and depletion layer of a pn junction, Built-in potential

2.4 Depletion layer model: Field and potential in the depletion layer, depletion-layer width

2.5 Reverse-biased PN junction; Capacitance-voltage characteristics; Junction breakdown: peak electric field. Tunneling breakdown and avalanche breakdown

2.6 Carrier injection under forward bias-Quasi-equilibrium boundary condition; current continuity equation; Excess carriers in forward-biased pn junction

2.7 PN diode I-V characteristic, Charge storage

UNIT-III THE BIPOLAR TRANSISTOR

3.1 The Bipolar Transistor: Introduction, Modes of operation, Minority Carrier distribution, Collector current, Base current, current gain, Base width Modulation by collector current, Breakdown mechanism, Equivalent Circuit Models - Ebers -Moll Model

UNIT-IV METAL-SEMICONDUCTOR JUNCTION AND MOS CAPACITOR

4.1 Metal-Semiconductor Junction: Schottky Diodes: Built-in potential, Energy-band diagram

4.2 I-V characteristics, Comparison of the Schottky barrier diode and the pn-junction diode

4.3 Ohmic contacts: tunneling barrier, specific contact resistance. MOS Capacitor,The MOS structure, Energy band diagrams

4.4 Flat-band condition and flat-band voltage,Surface accumulation, surface depletion

4.5 Threshold condition and threshold voltage, MOS C-V characteristics, Qinv in MOSFET

UNIT-V MOS TRANSISTOR

5.1 MOS Transistor: Introduction to the MOSFET, Complementary MOS (CMOS) technology, V-I Characteristics, Surface mobilities and high-mobility FETs, JFET, MOSFET Vt, Body effect and steep retrograde doping, pinch-off voltage

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