# Electronic Devices & Circuits (Transistor)

Course Code:ULZ0073

Author:uLektz

University:

Regulation:2017

Categories:Electronics & Communication

Format : ePUB3 (DRM Protected)

Type :eBook

FREE

Description :Electronic Devices & Circuits (Transistor) of ULZ0073 covers the latest syllabus prescribed by General for All University for regulation 2017. Author: uLektz, Published by uLektz Learning Solutions Private Limited.

Note : No printed book. Only ebook. Access eBook using uLektz apps for Android, iOS and Windows Desktop PC.

##### Topics
###### UNIT I:PN JUNCTION DIODE & ITS APPLICATIONS

1.1 Review of semi conductor Physics n and p –type semi conductors - Mass Action Law - Continuity Equation - Hall Effect - Fermi level in intrinsic and extrinsic semiconductors

1.2 PN Diode Equation - Volt- Ampere (V-I) Characteristics - Temperature Dependence of V-I Characteristics - Volt- Ampere (V-I) Characteristics - Temperature Dependence of V-I Characteristics

1.3 Ideal Versus Practical Static and Dynamic Resistances - Diode Equivalent circuits - Break down Mechanisms in semiconductor Diodes - Zener Diode Characteristics

1.4 PN Junction as a Rectifier - Half wave rectifier, ripple factor, full wave rectifier, Bridge Rectifier - Harmonic components in a rectifier circuit

1.5 Inductor filter, Capacitor filter, L- section filter, π- section filter - Use of Zener Diode as a Regulator - Illustrative problems

###### UNIT II:TRANSISTOR AND FET CHARECTERISTICS

2.1 Transistor construction - BJT Operation - BJT Symbol - Transistor as an Amplifier

2.2 Common Emitter - Common Base and Common Collector Configurations - Limits of Operation - BJT Specifications

2.3 The Junction Field Effect Transistor (Construction, Principle of Operation, Symbol) - Pinch-Off Voltage - Volt-Ampere Characteristics, FET as Voltage Variable Resistor

2.4 Comparison between BJT and FET, MOSFET - Basic Concepts, Construction, modes(depletion & enhancement) - symbol, principle of operation, characteristics

###### UNIT III:BIASING AND STABILISATION

3.1 Operating Point - DC and AC Load Lines - Importance of Biasing

3.2 Fixed Bias, Collector to Base Bias - Self Bias - Bias Stability - Stabilization against Variations in ICO-VBE and β, Bias Compensation Using Diodes and Transistors

3.3 Thermal Runaway - Condition for Thermal Stability in CE configuration - Biasing of FET – Source self bias

3.4 Biasing for zero current Drift - Biasing against Devices variation - Illustrative problems

###### UNIT IV:SMALL SIGNAL ANALYSIS OF AMPLIFIERS (BJT & FET)

4.1 BJT Modeling using h-parameters -Determination of h-Parameters from Transistor Characteristics - Measurement of h-Parameters - Analysis of CE, CB and CC configurations using h-Parameters

4.2 Comparison of CB, CE and CC configurations - Simplified Hybrid Model - Millers Theorem - Dual of Millers Theorem

4.3 Small Signal Model of JFET & MOSFET - Small signal analysis of Common Source, and Common Drain Amplifiers using FET - Illustrative problems

###### UNIT V:SPECIAL PURPOSE ELECTRONIC DEVICES

5.1 Principle of Operation and Characteristics of Tunnel Diode - Varactor Diode, Schottky Barrier Diode

5.2 Silicon Control Rectifier - Diac - Triac & Uni-Junction Transistor (UJT)

5.3 Semiconductor photo devices - LDR, LED, Photo diodes & Photo transistors