Book Details

Physics of Semiconductor Devices

Physics of Semiconductor Devices

Published by uLektz

Course Code:BSCP1207

Author:uLektz

University: Biju Patnaik University of Technology (BPUT)

Regulation:2010

Categories:Electronics & Communication

Format : ico_bookePUB3 (DRM Protected)

Type :eBook

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Description :Physics of Semiconductor Devices of BSCP1207 covers the latest syllabus prescribed by Biju Patnaik University of Technology (BPUT) for regulation 2010. Author: uLektz, Published by uLektz Learning Solutions Private Limited.

Note : No printed book. Only ebook. Access eBook using uLektz apps for Android, iOS and Windows Desktop PC.

Topics
Module I Introduction to the Quantum Theory of Solids,Electrons and Holes in semiconductors

1.1 Introduction to the quantum theory of solids: Formation of energy bands, Equation for conductivity, The k-space diagram (two and three dimensional representation)

1.2 Conductors, semiconductors and insulators. Electrons and Holes in semiconductors: Silicon crystal structure, Donors and acceptors in the band model, electron effective mass

1.3 Density of states, Thermal equilibrium, Fermi-Dirac distribution function for electrons and holes, Fermi energy. Equilibrium distribution of electrons & holes

1.4 Derivation of n and pfrom D(E) and f(E), Fermi level and carrier concentrations, The np product and the intrinsic carrier concentration. General theory of nand p, Carrier concentrations at extremely high and low temperatures: complete ionization, partial ionization and freeze-out. Energy-band diagram and Fermi-level, Variation of EF with doping concentration and temperature. Quantum free electron theory

Module II Motion and Recombination of Electrons and Holes & Bipolar Transistor

2.1 Motion and Recombination of Electrons and Holes (continued): Carrier diffusion: diffusion current, Total current density, relation between the energy diagram and potential, electric field. Einstein relationship between diffusion coefficient and mobility. Electron-hole recombination, Thermal generation

2.2 PN Junction: Building blocks of the pn junction theory: Energy band diagram and depletion layer of a pn junction, Built-in potential

2.3 Depletion layer model: Field and potential in the depletion layer, depletion-layer width

2.4 Reverse-biased PN junction; Capacitance-voltage characteristics; Junction breakdown: peak electric field. Tunneling breakdown and avalanche breakdown

2.5 Carrier injection under forward bias-Quasi-equilibrium boundary condition; current continuity equation; Excess carriers in forward-biased pn junction

2.6 PN diode I-V characteristic, Charge storage

2.7 The Bipolar Transistor: Introduction, Modes of operation, Minority Carrier distribution, Collector current, Base current, current gain, Base width Modulation by collector current, Breakdown mechanism, Equivalent Circuit Models - Ebers -Moll Model

Module III Metal-Semiconductor Junction, MOS Capacitor & MOS Transistor

3.1 Metal-Semiconductor Junction: Schottky Diodes: Built-in potential, Energy-band diagram

3.2 I-V characteristics, Comparison of the Schottky barrier diode and the pn-junction diode

3.3 Ohmic contacts: tunneling barrier, specific contact resistance. MOS Capacitor,The MOS structure

3.4 Flat-band condition and flat-band voltage,Surface accumulation, surface depletion

3.5 Threshold condition and threshold voltage, MOS C-V characteristics, Qinvin MOSFET.MOS Transistor: Introduction to the MOSFET, Complementary MOS (CMOS) technology

3.6 V-I Characteristics, Surface mobilities and high-mobility FETs, JFET, MOSFET Vt, Body effect and steep retrograde doping, pinch-off voltage

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